NVTFS5811NL
Power MOSFET
40 V, 6.7 m W , 40 A, Single N ? Channel
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? NVTFS5811NLWF ? Wettable Flanks Product
? AEC ? Q101 Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
40 V
http://onsemi.com
R DS(on) MAX
6.7 m W @ 10 V
10 m W @ 4.5 V
I D MAX
40 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
40
± 20
Unit
V
V
N ? Channel MOSFET
D (5 ? 8)
Continuous Drain Cur-
rent R Y J ? mb (Notes 1,
2, 3, 4)
Power Dissipation
R Y J ? mb (Notes 1, 2, 3)
Steady
State
T mb = 25 ° C
T mb = 100 ° C
T mb = 25 ° C
T mb = 100 ° C
I D
P D
40
28
21
10
A
W
G (4)
S (1,2,3)
3, 4) T A = 100 ° C
Power Dissipation
T A = 25 ° C
R q JA (Notes 1, 3)
Continuous Drain Cur- T A = 25 ° C
rent R q JA (Notes 1 &
Steady
State
T A = 100 ° C
Pulsed Drain Current T A = 25 ° C, t p = 10 m s
Operating Junction and Storage Temperature
I D
P D
I DM
T J , T stg
16
11
3.2
1.6
354
? 55 to
+175
A
W
A
° C
1
WDFN8
( m 8FL)
CASE 511AB
XXXX
MARKING DIAGRAM
1
S D
S XXXX D
S AYWW G D
G G D
= Specific Device Code
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L(pk) = 36 A, L = 1.0 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
E AS
T L
17
65
260
A
mJ
° C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Junction ? to ? Mounting Board (top) ? Steady
State (Note 2 and 3)
Junction ? to ? Ambient ? Steady State (Note 3)
Symbol
R Y J ? mb
R q JA
Value
7.2
47
Unit
° C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi ( Y ) is used as required per JESD51 ? 12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface ? mounted on FR4 board using a 650 mm 2 , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
? Semiconductor Components Industries, LLC, 2013
May, 2013 ? Rev. 2
1
Publication Order Number:
NVTFS5811NL/D
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相关代理商/技术参数
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NVTFS5820NLTWG 功能描述:MOSFET Single N-Channel 60V,29A,11.5mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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